STAT210example3.1: STAT210example3.1: Plasma Etching Experiment

In thoree/stat340: Data and functions for BIAS at NMBU

STAT210example3.1: Plasma Etching Experiment

Description

An etching process is widely used when removing unwanted material after coating wafers with for example silicon dioxide, and a typical single-wafer plasma etching tool is a radio-frequency (RF) generator. An engineer is interested in the relationship between the RF power setting and the etch rate. This data shows the results from an experiment of four levels of RF power with five replicates.

Usage

STAT210example3.1

Format

A data frame with 20 observations (rows) and 2 variables (columns).

	Column name	Data type	Description	Values
[,1]	RF_Power	factor	4 settings of the RF power in W	(160, 180, 200, 220)
[,2]	Etch_Rate	integer	The etching rate in Å/min	(530 - 725)

Details

This data is from Example 3.1 in Design and Analysis of Experiments. 9th Edition, EMEA Edition.

Source

Montgomery, D. C. (2019) Design and Analysis of Experiments, 9th Edition, EMEA Edition. New York: Wiley.

See Also

STAT210prob2.29, STAT210prob2.31, STAT210prob2.33, and STAT210prob2.39

Examples

# A short summary of the variables
summary(STAT210example3.1)

# Etch rate per RF power setting
boxplot(Etch_Rate ~ RF_Power, data = STAT210example3.1,
        col = "darkslategray1")

thoree/stat340 documentation built on June 30, 2024, 4:04 p.m.