STAT210prob2.31: STAT210prob2.31: Photoresist Thickness for Wafers

In thoree/stat340: Data and functions for BIAS at NMBU

STAT210prob2.31: Photoresist Thickness for Wafers

Description

Photoresist is a light-sensitive material applied to semi-conductor wafers so that the circuit pattern can be imaged on to the wafer. After application, the coated wafers are baked to remove the solvent in the photoresist mixture and to harden the resist. This data are the measurements of photoresist thickness in kA for eight wafers baked at two different temperatures. Assume that all of the runs were made in random order.

Usage

STAT210prob2.31

Format

A data frame with 8 observations (rows) and 2 variables (columns).

	Column name	Data type	Description	Values
[,1]	Thickness_95	numeric	Resist thickness for wafers baked at 95°C	(6.467 - 11.739)
[,2]	Thickness_100	numeric	Resist thickness for wafers baked at 100°C	(3.772 - 8.963)

Details

This is data from Exercise 2.31 in Design and Analysis of Experiments, 9th Edition, EMEA Edition.

Source

Montgomery, D. C. (2019) Design and Analysis of Experiments, 9th Edition, EMEA Edition. New York: Wiley.

See Also

STAT210prob2.29, STAT210example3.1, STAT210prob2.33, and STAT210prob2.39

Examples

# A short summary of the variables
summary(STAT210prob2.31)

# Stacked data
resist_thickness <- stack(STAT210prob2.31)
colnames(resist_thickness) <- c("thickness", "temperature")

# Ounces per machine
boxplot(thickness ~ temperature, data = resist_thickness,
        col = "mistyrose")

thoree/stat340 documentation built on June 30, 2024, 4:04 p.m.