Plasma: Plasma Etching

Description Usage Details Author(s) References

Description

An experiment designed to guide optimization of a nitride etch process

Usage

1

Details

An orthogonal arry, capable of supporting a linear model only. The factors are denoted by their units of measurement. They were W, the power applied to the cathode; mTorr, the pressure in the reaction chamber; cm, gap between anode and cathode; sscm, flow if the reactant gas. The three responses: Amin, etch rate; Pct, unifomity; sinpoly, selectivity.

Author(s)

Bob Wheeler [email protected]

References

Vardeman, Stephen B. (1994).Statistics for engineering problem solving. PWS publishing Co. Boston. p 596


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